High-Resolution Xe Plasma FIB
Expanded Patterning Capabilities
Up until recently, the resolution of plasma FIB was limited to 25 nm, a fact that restricted its use in higher precision applications. TESCAN has now further improved its Xe plasma FIB by increasing the source brightness resulting in a high-resolution Xe plasma FIB column (HR i-FIB) capable of achieving resolution of less than 15 nm. This improvement has made Xe plasma FIB more versatile extending its range of use into the area of traditional Ga FIB applications. With the new high-resolution Xe plasma FIB column you can complete large-scale milling tasks in unbeatable times at high currents up to 1 μA, and, on the other hand, perform tasks using the smallest spot size for all those applications that require higher levels of precision. This is a significant improvement over the state-of-the-art.
With this improvement, TESCAN has now two Xe plasma FIB column options to choose from according to your specific needs, the i-FIB and HR i-FIB columns. Both columns represent a concrete solution to overcome volume limitations in FIB milling enabling milling speeds that can be up to 50 times faster compared to Ga source FIBs, hence, allowing fast and effortless sample preparation/analyses exceeding spatial dimensions of 100 × 100 × 100 µm³.
Electrical properties of superconductive YBCO nano-constrictions were investigated via four-contact resistivity measurements. The contact pads were defined by optical lithography on a 100 nm YBCO thin layer. The new high-resolution Xe plasma FIB has been used to narrow the central 5 µm-wide constriction (marked with the red arrow) to a width of less than 50 nm. (a) Overview (WIDE FIELD) showing the four-contact layout. (b) Constriction to be narrowed. (c) Top view showing a final width of < 50 nm. Courtesy of the Institute of Electrical Engineering, Slovak Academy of Sciences, Department of Microelectronics and Sensors.